IXFR34N80 rated equivalent, single mosfet die avalanche rated.
W °C °C °C °C V~ g
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain t.
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V.
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